note: all specifications are subject to change without notification. scd's for these devices should be re viewed by ssdi prior to release. data sheet #: TR0097B doc solid state devices, inc. 14830 valley view blvd * la mirada, ca 90638 phone: (562) 404-7855 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com designer?s data sheet smd.22 smd.22l pin 1= collector; pin 2= emitter; pin 3= base sft4300s.22 sft4300s.22l 2 a, 150 volts general purpose npn transistor features: ? radiation tolerant ? fast switching ? hermetic surface mount device with excellent thermal properties ? available with lead extensions (smd.22l) ? complementary use with sft5333s.22 ? available in reverse polarity ? tx, txv, s-level screening available maximum ratings symbol value units collector ? emitter voltage v ceo 80 volts collector ? base voltage v cb 150 volts emitter - base voltage v be 8 volts continuous collector current continuous peak i c i cmax 2 5 amps base current i b 1 amps power dissipation @ tc = 25oc power dissipation @ ta = 25oc note 1 note 2 p d 15 1.0 w operating & storage temperature top & tstg -65 to +200 oc maximum thermal resistance junction to case and to ambient r jc r ja 11.67 (typ 8) 175 oc/w note1: derated 85.7 mw/c above tc= 25c note2: derated 5.7 mw/c above ta= 25c .065 .010 .140 .052 .134 .030 .070 .090 .150 .007 .220.007 .005 typ .040 .050.015 .050.015 .005.002 .005 typ .220.007 .150 .007 .090 .070 .025 min .120 .040 .120 .070 .010
note: all specifications are subject to change without notification. scd's for these devices should be re viewed by ssdi prior to release. data sheet #: TR0097B doc solid state devices, inc. 14830 valley view blvd * la mirada, ca 90638 phone: (562) 404-7855 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com sft4300s.22 sft4300s.22l electrical characteristic 4 / symbol min typ max units collector ? emitter sustaining voltage i c = 30 ma bv ceo(sus) 80 95 - v collector ? base breakdown voltage i c = 0.2 ma bv cbo 150 240 - v emitter - base breakdown voltage i e = 0.2 ma bv ebo 8 9 - v collector-emitter cutoff current v ce = 40 v; i b = 0 i ceo ?? 0.01 5 ua collector-base cutoff current v cb = 90 v; i e = 0 v cb = 90 v; i e = 0; ta= 100 oc i cbo1 i cbo2 - - - - 1 75 ua emitter-base cutoff current v be = 6 v; i c = 0 i ebo ?? 0.01 1 ua dc current gain i c = 1.0 a, v ce = 5 v i c = 2.0 a, v ce = 5 v hfe 1 hfe 2 50 50 - - 200 - i c =0.5a, v ce =1v,ta=-65oc i c =2.0a, v ce =2v,ta=-65oc i c =5.0a, v ce =2v,ta=-65oc hfe 7 hfe 8 hfe 9 - - - 45 40 20 - - - collector-emitter saturation voltage i c = 1.0 a, i b = 100 ma i c = 2.0 a, i b = 200 ma i c = 5.0 a, i b = 500 ma v ce(sat)1 v ce(sat)2 v ce ( sat ) 3 - - - 0.12 0.22 0.56 0.3 0.5 - v collector-base saturation voltage i c = 5.0 a, i b = 500 ma v be(sat)3 - 1.1 - v base-emitter on voltage i c = 2.0 a, v ce = 2 v v be(on) - 0.83 1.2 v current gain bandwidth product i c = 0.5a, v ce = 5 v, f= 10 mhz f t 80 120 - mhz input capacitance v be = 8 v, i c = 0, f= 1mhz c ib ?? ?? 225 pf output capacitance v cb = 30 v, i e = 0, f= 1mhz c ob ?? ?? 45 pf switching times v cc = 20 vdc; i c = 1 a; v eb(off) = 3.7 v; i b1 = i b2 = 100 ma; r l= 20 ? t on t off - - 0.06 0.85 0.13 1.5 us notes: * pulse test: pulse width = 300sec, duty cycle = 2% 1 / for ordering information, price, availability contact factory. 2 / screening per mil-prf-19500 3 / for package outlines contact factory. 4 / unless otherwise specified, a ll electrical characteristics @25oc.
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